Dr. Hesham Mohammed Enshasy

 

 

 

E-mail:
henshasy@kfu.edu.sa

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   

RANK: Assistant Professor

 

EDUCATION:

 

·      Ph.D. Engineering Physics , Photonics, McMaster University, Canada, 2010.

 

·      M.Sc. Electrical Engineering, Semiconductor-Thin Films, University Of Nebraska - Lincoln, USA, 2000.

 

·      B.Sc.  Semiconductors, Garyounis University, Libya, 1992.

 

 

RESEARCH INTERESTS:

Research, design and develop optoelectronic devices grown by MOCVD and MBE technology to improve device performance and applications. Fabricate and design sensing systems for oil and gas industry. Manufacture high power wide tunable Fabry-Perot diode lasers, 40G Laser Integrated Modulators (LIM) and 40G Photo detectors (PIN) for different applications. Prominent career progression from process development to leadership of product launch team in optoelectronic devices, design and manufacturing, thin film deposition, Photolithography, dry and wet etching processes.

Experience:

Over 20 years of experience in electronic, optoelectronics and semiconductor teaching, research, development and manufacturing. Teach semiconductor devices electronics and optoelectronics for engineering undergraduate and graduate students.

 

Publications:

  • Qasem Abu Al-Haija, Mohamad Musab Asad, Ibrahim Marouf, Ahmad Bakhuraibah, Hesham Enshasy, “ FPGA SYNTHESIS AND VALIDATION OF PARALLEL PREFIX ADDERS”, Journal  of Acta Electronica Malaysia, Vol. 3, (No.2), pp. 31-36, 2019.

  • Hesham Enshasy, Ibrahim Al-Badi, Qasem Abu Al-Haija, Muath Al-Saleh1 , Abdulrahman Bu-Shalf, Abdullah Al-Dosseri, “A Comprehensive Design of Unmanned Ground Search and Rescue Robot”, Journal of Information and Computing Science Vol. 14, (No.1), pp.052-080, 2019.
  • Hesham Enshasy, Qasem Abu Al-Haija, Hasan Al-Amri,Mohamed Al-Nashri, Sultan Al-Muhaisen, Mashhour Al-Tarayrah, “A COMPREHENSIVE CONSTRUCTION OF HYDROGEN-HYDROGEN-OXYGEN (HHO) CELL AS RENEWABLE ENERGY STORAGE”, Journal of Research in Engineering and Applied Sciences (JREAS), Vol. 04, Issue 01, Jan 2019.
  • Hesham Enshasy, “Industrial Tunable Diode Lasers, Market Place, The know-how of Design Technology, Application and Challenges”, Photonic Workshop, Uıusal Optik, Elektro-Optik ve Fotonik Calistayi, Bilkent University Ankara, Turkey, Sept. 2018.

  • Hesham M. Enshasy, Amjad Omar, Hussain Alnuairi, and Chang Mosong, “Microwave NDT for In-Situ Monitoring of Fresh/Saline Water Fraction in Natural Gas Flow”, International Journal of Electronics, Volume 104 (5), 2017.

  • M. M. Asad, Ibrahim A. Marouf, and Hesham. M. Enshasy, “An Effective Way to Program Microcontrollers For High speed Control Operations”, IEEE International Conference on “Intelligent Techniques in Contr., Optimiz. and Signal Proce. (INCOS’17), Krishnankoil, India, March 2017.

  • Qasem A. Hija, Hesham. M. Enshasy and A. Smadi, “Estimating Energy Consumption of Diffie Hellman Encrypted Key Exchange (DH-EKE) for Wireless Sensor Network”, IEEE International Conference on “Intelligent Techniques in Contr., Optimiz. and Signal Proce. (INCOS’17), Krishnankoil, India, March 2017.

  • Hesham M. Enshasy, “Performance Improvement of Broadly tunable InGaAsP/InP asymmetric multiple quantum well laser diodes: Doping effect study”, SPIE, San Diego 2016.

     

  • Hesham M. Enshasy, “Improve the light power of InP based 100nm tunable AMQW lasers using forced electrical confinement method”, Proc. of SPIE, Vol. (9586), p. 0F1-0F11. , 2015.

  • Hesham M. Enshasy and Daniel T. Cassidy, “The effect of InP based wide-tunable AMQW laser length on power profile”, Proc. of SPIE, Vol. (9134 91341M), p. 1-11, 2014.

  • Hesham M. Enshasy, Amjad Omar, Hussain Alnuairi, and Chang Mosong, “Spectroscopic Sensing for In-Situ Monitoring of Water Fraction in Natural Gas Flow”, SPE Vol. (167465-MS), p. 1-8,  2013.

  • Hesham M. Enshasy and Daniel T. Cassidy, “Effect of doping profile on the output power of broadly tuneable InGaAsP/InP asymmetric multiple quantum well lasers: finite element method simulations and experimental results”, IET Optoelectron., Vol. (6), issue 1, p.57–65, Feb. 2012.

  •  Hesham M. Enshasy and Daniel T. Cassidy, “Electrical and thermal study of ridge waveguide widely
     tunable semiconductor diode laser”, Canadian Semiconductor Technology Conference Hamilton, 
    Ontario, Aug., 2009.
  • Hesham M. Enshasy and Daniel T. Cassidy, “Sub-Micrometer Distance Measurements with a Broadly
     Tunable Short-External-Cavity InGaAsP/InP Diode Laser”, IET Optoelectron., Vol. (1), issue 4, p. 157-162,
     Aug., 2007.
  • N. J. Ianno, H. Enshashy, and R. O. Dillon, “Aluminum Oxynitride Coatings for Oxidation Resistance of 
    Epoxy Films”, Elsevier Journal Surface and Technology, Vol. (155), p.130, 2002.
  • Hesham M. Enshasy and Daniel T. Cassidy, “Pathway to high power wide tunable Diode lasers”, Ontario 
    Photonics Consortium, London, Ontario, April, 2007.
  • N. Barakat and H. Enshasy, “The Quality Imperative in Mass Production of Electronic Parts”, 19th Canadian
     Congress of Applied Mechanics (CANCAM) June 1- 6th 2003, Calgary, Alberta, Canada.
  • N. Barakat and H. Enshasy, “A Statistical Approach to Improve Wafer Fabrication Yield”, ASME-WAM,
     Nov. 2002, New Orleans, Louisiana, USA.
  • H. Enshasy and N. Barakat, “Yield Enhancement in Wafer Manufacturing Through Applying Statistical 
    Process Control”, CSME May 21-24, 2002, Kingston, Ontario, Canada.
  • Enshasy Hesham, and Ianno Ned. “DEPOSITION OF CRACK FREE ALUMINUM OXYNITRIDE (AlNxOy)”,
     NASA proceedings, April 1999, Lincoln, Nebraska, USA.
    Patent Applications:
  • Chip Scale Packaging, May 2001- Patent pending # 20030080832, USA Patent office